Typical Characteristics T C = 25°C unless otherwise noted
2000
1000
10 μ s
100 μ s
500
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
100
10
OPERATION IN THIS
1ms
10ms
STARTING T J = 25 o C
AREA MAY BE
LIMITED BY DS(ON)
DC
10
1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1
STARTING T J = 150 o C
0.1
1
10
100
.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
PULSE DURATION = 80 μ s
150
120
DUTY CYCLE = 0.5% MAX
V DD = 15V
120
V GS = 10V
V GS = 7V
V GS = 6V
90
60
T J = 175 o C
90
60
30
0
T J = 25 o C
T J = -55 o C
30
0
V GS = 5V
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
4.0
4.5
5.0
5.5
6.0
0
0.5
1.0
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
7
PULSE DURATION = 80 μ s
2.5
PULSE DURATION = 80 μ s
6
5
4
DUTY CYCLE = 0.5% MAX
V GS = 6V
2.0
1.5
1.0
DUTY CYCLE = 0.5% MAX
V GS = 10V
V GS = 10V, I D = 80A
3
0.5
0
2 0
40
6 0
80
-80
-40
0 40 80 120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
4
www.fairchildsemi.com
相关PDF资料
P51-100-A-D-D-5V-000-000 SENSOR 100PSI 7/16-20 UNF 1-5V
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